p-channel enhancement mode mosfet feature ? -30v/-4.2a, r ds(on) =55m(max) @v gs = -10v. r ds(on) = 70m(max) @v gs = -4.5v. r ds(on) =120m(max) @v gs = -2.5v. ? super high dense cell design for extremely low r ds(on) ? reliable and rugged ? sot-23 for surface mount package sot-23 applications power management portable equipment and battery powered systems. absolute maximum ratings t a =25 unless otherwise noted parameter symbol limit units drain-source voltage v ds -30 v gate-source voltage v gs 12 v drain current-continuous i d -4.2 a electrical characteristics t a =25 unless otherwise noted parameter symbol test conditions min typ. max units off characteristics drain to source breakdown voltage bvdss vgs=0v, id=-250 a -30 - - v zero-gate voltage drain current idss vds=-24v, vgs=0v - - -1 a gate body leakage current, forward igssf vgs=12v, vds=0v - - 100 na gate body leakage current, reverse igssr vgs=-12v, vds=0v - - -100 na on characteristics gate threshold voltage vgs(th) vgs= vds, id=-250a -0.7 - -1.3 v static drain-source on-resistance rds(on) vgs =-10v, id =-4.2 a - 50 55 m vgs =-4.5v, id =-4.0 a - 60 70 m vgs =-2.5v, id =-1.0 a - 80 120 m drain-source diode characteristics and maximum ratings drain-source diode forward voltage vsd vgs =0v, is=-1.0 a -1.0 v sales@zpsemi.com www.zpsemi.com AO3401 1 of 5
typical characteristics sales@zpsemi.com www.zpsemi.com AO3401 2 of 5
package outline dimensions (unit: mm) sot-23 sales@zpsemi.com www.zpsemi.com AO3401 3 of 5
s ot - 23 carrier tape sales@zpsemi.com www.zpsemi.com AO3401 4 of 5
s ot - 23 carrier reel sales@zpsemi.com www.zpsemi.com AO3401 5 of 5
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